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Hyperfine Interactions

, Volume 56, Issue 1–4, pp 1569–1576 | Cite as

A CEMS investigation of57Fe implanted in Al and Cu at low temperature

  • H. de Waard
  • G. L. Zhang
Radiation Damage and Implantation

Abstract

A new type of CEM-spectrometer allows in situ measurements on metal foils implanted at low temperatures. It has been used to study defect association and clustering of57Fe in Al and Cu. For57FeAl, the substitutional fraction (fs) in samples implanted at 120 K is somewhat smaller than expected for a random impurity distribution but much larger than after room temperature implantation. For57FeCu,fs for samples implanted at 120 K is less than 0.5 of the value expected for a random distribution and it falls to zero after annealing at 600 K, where more extensive Fe clustering occurs. Vacancy trapping in stage III does not contribute significantly to the observed defect sites.

Keywords

Thin Film Random Distribution Defect Site CEMS Metal Foil 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© J.C. Baltzer A.G. Scientific Publishing Company 1990

Authors and Affiliations

  • H. de Waard
    • 1
  • G. L. Zhang
    • 1
  1. 1.Laboratorium voor Algemene Natuurkunde and Materials Science CentreUniversity of GroningenNetherlands

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