Journal of Materials Science

, Volume 5, Issue 12, pp 1043–1046 | Cite as

Calculation of the In/Ga/P ternary phase diagram and its relation to liquid phase epitaxy

  • A. W. Mabbitt


The Ga/In/P ternary phase diagram is calculated. A regular solution is assumed for binary solubility and the derived interaction parameters are used to calculate the deviation from ideality of the ternary system using a quasi-regular solution model. Comparison is made between theoretical and experimental results on liquid epitaxial layers. It is suggested that a solid/solid miscibility gap in the Ga/In/P system is a distinct possibility.


Polymer Phase Diagram Liquid Phase Ternary System Interaction Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    B. Hakki,Proc. Electrochem. Soc. Spring Meeting, May 1970.Google Scholar
  2. 2.
    M. Ilegems andG. L. Pearson, 1968 Symp. on GaAs, Dallas.Google Scholar
  3. 3.
    L. Vieland,Acta Metallurgica 11 (1963) 137.CrossRefGoogle Scholar
  4. 4.
    R. N. Hall,J. Electrochem. Soc. 110 (1963) 385.Google Scholar
  5. 5.
    M. Rubenstien,J. Electrochem. Abstracts 11 (1962) 129.Google Scholar
  6. 6.
    J. Van Den Boomgaard andK. Schol,Phillips Res. Rept. 12 (1957) 127.Google Scholar
  7. 7.
    R. K. Willardson andA. C. Beer, “Semiconductors and Semimetals” (Academic 1968),4 p. 35.Google Scholar
  8. 8.
    G. B. Stringfellow andP. E. Greene,J. Phys. Chem. Solids 30 (1969) 1779.CrossRefGoogle Scholar
  9. 9.
    H. Rupprecht,Proc. 1966 Symp. on GaAs, Reading.Google Scholar

Copyright information

© Chapman and Hall Ltd. 1970

Authors and Affiliations

  • A. W. Mabbitt
    • 1
  1. 1.Allen Clark Research CentreThe Plessey Company LimitedCaswell, Towcester

Personalised recommendations