Journal of Materials Science

, Volume 26, Issue 15, pp 4142–4149 | Cite as

Reaction chemistry at joined interfaces between silicon nitride and aluminium

  • X. S. Ning
  • T. Okamoto
  • Y. Miyamoto
  • A. Koreeda
  • K. Suganuma
Papers

Abstract

Joined interfaces of HIPed additive-free silicon nitride ceramics/aluminium braze bonded at a low temperature of 1073 K for 18 ks or at a high temperature of 1473 K for 1.8 ks in vacuum of 1.3 mPa and of β silicon nitride powders/aluminium powders bonded at the low temperature for 1.8 ks or 18 ks in the same vacuum are identified by analytical transmission electron microscopy and X-ray diffraction method. Mullite, some small crystals and β′-sialon are detected at the interface of the ceramics/aluminium braze bonded at the low temperature and 15R AIN-polytype sialon, β′-sialon, aluminium nitride, mullite and silica-alumina noncrystalline are detected at that bonded at the high temperature. At the interface of the two kinds of powders, aluminium nitride and silicon are also detected besides β′-sialon and silica-alumina noncrystalline even though the bonding was conducted at the low temperature. The interfacial reactions of the joints are influenced not only by bonding temperature but also by the oxide formed at the interface before bonded.

Keywords

Oxide Polymer Aluminium Silicon Transmission Electron Microscopy 

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Copyright information

© Chapman and Hall Ltd 1991

Authors and Affiliations

  • X. S. Ning
    • 1
  • T. Okamoto
    • 1
  • Y. Miyamoto
    • 1
  • A. Koreeda
    • 1
  • K. Suganuma
    • 1
  1. 1.The Institute of Scientific and Industrial ResearchOsaka UniversityOsakaJapan

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