Kinetics of the nanocrystalline structure formation
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The kinetics of the nanocrystalline structure formation in the Fe73.5Cu1Nb3Si22.5−xBx (x=6. 7. 8. 9 at. %) was followed during the annealing runs interrupted between 300 and 700°C.57Fe room temperature Mössbauer spectra were taken and complemented by the electrical resistivity and X-Ray diffraction measurements. It has been found that for the 50 K/min temperature increase the formation of the nanocrystalline phase begins above 450°C reaching a maximum around 500°C and is followed by the second stage of crystallization of the disordered intergranular remainder above ca 600°C accompanied by the changes in the occupation of the iron sites in the crystalline α−Fe−Si phase. Thus gained composition-temperature dependence seems to witness for the inhibiting influence of the substitution of B by Si on the crystallization process.
KeywordsIron Crystallization Thin Film Electrical Resistivity Structure Formation
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