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Mössbauer study of donor-hydrogen complexes in silicon

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Abstract

Mössbauer spectroscopy has been applied to study the Sb-H complex in Si, using the 23.9 keV transition of119Sn populated in the decay of119Sb. Hydrogen was introduced into a well annealed Si crystal, previously implanted with119Sb ions. The relative intensity of the H-associated line reaches 26% at the highest hydrogen dose of 1016 cm−2. The Sb−H complexes dissociate around 440 K. No Sb−H complexes were observed in material that remained p-type after implantation of119Sb. The implications of these measurements for the structure of the Sb−H complex and for the charge states of the diffusing hydrogen are discussed.

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Author notes

  1. Z. N. Liang

    Present address: Dept. of Physics, Zhongshan University, Guangzhou, People's Republic of China

Authors and Affiliations

  1. Laboratorium voor Algemene Natuurkunde, Materials Science Centre, Westersingel 34, 9718 CM, Groningen, The Netherlands

    Z. N. Liang & L. Niesen

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  1. Z. N. Liang
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  2. L. Niesen
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Liang, Z.N., Niesen, L. Mössbauer study of donor-hydrogen complexes in silicon. Hyperfine Interact 60, 749–752 (1990). https://doi.org/10.1007/BF02399861

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