Abstract
The preparation processes of epitaxially grown YSZ (Yttrium stabilized ZrO2) buffer layers on silicon (100) wafers were investigated. The “etching” procedure, at which the thin (∼5 nm) SiO2 native amorphous layer from the Si surface was reduced to volatile SiO by deposition of a few nm thick Zr layer and subsequent annealing at low pressure, was monitored by mass spectrometer. The subsequent YSZ layer was deposited by evaporation or RF sputtering technique and examined by XRD and TEM observations. The results show that the epitaxy of YSZ layer is strongly influenced by efficiency of amorphous SiO2 reduction at Si surface.
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Španková, M., Gaži, Š., Chromik, Š. et al. The problems of native SiO2 layer removing for epitaxial growth of YSZ film on Si. J Low Temp Phys 106, 439–445 (1997). https://doi.org/10.1007/BF02399650
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DOI: https://doi.org/10.1007/BF02399650