Radiogenic Sn defects in ion-implanted CdTe
- 17 Downloads
Radioactive119mCd+ and119In+ ions have been implanted into CdTe single crystals at temperatures between 50–300K. Radiogenic defects formed with the daughter119Sn have been investigated by Mössbauer spectroscopy of the emitted 24 keV γ radiation. All Mössbauer spectra could be analysed consistently with three lines. These are proposed to be due to substitutional Sn on Cd sites in two different charge states and to Sn-vacancy complexes. The corresponding In-parent vacancy complexes anneal at 120K and above 300K.
KeywordsRadiation Spectroscopy Thin Film Charge State Complex Anneal
Unable to display preview. Download preview PDF.
- 1.H. de Waard, Proc. Int. Conf. on Mössbauer Spectroscopy, Jaipur 1981 (Ind. Nat. Sci. Acad., New Delhi, 1982) p. 5Google Scholar
- 2.H. de Waard and G.J. Kemerink, Physica 116B (1983) 210Google Scholar
- 3.G. Weyer, J.W. Petersen, and S. Damgaard, Physica 116B (1983) 470 and Physica 117B/118B (1983) 523Google Scholar
- 10.G. Weyer, S. Damgaard, and J.W. Petersen, EPS Conf. on: Nuclear Physics Methods in Materials Research, eds. K. Bethge et al. (Vieweg, Braunschweig, 1980) p. 445Google Scholar
- 11.K.B. Nielsen, H. Grann, H. Haas, F.T. Pedersen, and G. Weyer, J. Electr. Mat. in pressGoogle Scholar