Hyperfine Interactions

, Volume 29, Issue 1–4, pp 1237–1240 | Cite as

Radiogenic Sn defects in ion-implanted CdTe

  • H. Grann
  • F. T. Pedersen
  • G. Weyer
Radiation Damage, Implantation, After Effects


Radioactive119mCd+ and119In+ ions have been implanted into CdTe single crystals at temperatures between 50–300K. Radiogenic defects formed with the daughter119Sn have been investigated by Mössbauer spectroscopy of the emitted 24 keV γ radiation. All Mössbauer spectra could be analysed consistently with three lines. These are proposed to be due to substitutional Sn on Cd sites in two different charge states and to Sn-vacancy complexes. The corresponding In-parent vacancy complexes anneal at 120K and above 300K.


Radiation Spectroscopy Thin Film Charge State Complex Anneal 
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Copyright information

© J.C. Baltzer A.G., Scientific Publishing Company 1986

Authors and Affiliations

  • H. Grann
    • 1
    • 2
  • F. T. Pedersen
    • 1
    • 2
  • G. Weyer
    • 1
    • 2
  1. 1.Institute of PhysicsUniversity of AarhusAarhus CDenmark
  2. 2.ISOLDE CollaborationCERNGeneva 23Switzerland

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