Skip to main content
Log in

The Mössbauer search for Fe in Si

  • Ion Implantation
  • Published:
Hyperfine Interactions Aims and scope Submit manuscript

Abstract

In this review paper, a series of Mössbauer experiments on Fe in Si, spread over almost thirty years, is discussed. In early Mössbauer experiments, the role of precipitate formation during diffusion was insufficiently realized. Later, an apparent inconsistency was observed between ion implantation experiments by recoil implantation of Coulomb excited atoms and by conventional ion implantation. This inconsistency is removed by recent high-resolution Coulomb excitation recoil implantation studies and by ion implantation experiments at the temperature of liquid helium. These studies lead to an unambiguous identification of interstitial Fe and Co in Si. Finally, the present status of the theoretical predictions on the isomer shift of Fe in Si is reviewed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Recent review articles on Mössbauer Spectroscopy studies in semiconductors: G. Langouche, in.Mössbauer Spectroscopy Applied to Inorganic Chemistry, Vol. 3, ed. G.J. Long and F. Grandjean (Plenum, New York, 1989), p. 445; D.L. Williamson, Hyp. Int. 40(1988)249. A.R. Regel and P.P. Seregin, Sov. Phys. Semicond. 18(1984)723.

    Google Scholar 

  2. G. Langouche, M. de Potter and D. Schroyen, Phys. Rev. Lett. 53(1984)1364.

    Article  ADS  Google Scholar 

  3. W. Bergholz, Physica B116(1983)312.

    Article  Google Scholar 

  4. I. Dézsi, H. Engelmann, U. Gonser and G. Langouche, Hyp. Int. 33(1987)161.

    Article  Google Scholar 

  5. M. Paseman, W. Bergholz and W. Schröter, Phys. Stat. Sol. A81(1984)273.

    Google Scholar 

  6. S.B. Ogale, R. Joshee, V.P. Godbole, S.M. Kanetkar and V.G. Bhide, J. Appl. Phys. 57(1985)2915.

    Article  ADS  Google Scholar 

  7. A. Vantomme, M.F. Wu, I. Dézsi, G. Langouche, K. Maex and J. Vanhellemont, Mat. Sci. Eng. B4(1989)157.

    Article  Google Scholar 

  8. M. de Coster, H. Pollak and S. Amelinckx, in:Proc. 2nd Int. Conf. on the Mössbauer Effect, ed. D.M.J. Compton and A.H. Schoen (Wiley, New York, 1962), p. 289.

    Google Scholar 

  9. P.C. Norem and G.K. Wertheim, J. Phys. Chem. Solids 23(1962)1111.

    Article  Google Scholar 

  10. E.R. Weber, Appl. Phys. A30(1983)1.

    Article  ADS  Google Scholar 

  11. W. Bergholz, S. Damgaard, J.W. Petersen and G. Weyer, Phys. Stat. Sol. a 75(1983) 289.

    Google Scholar 

  12. D.L. Williamson, B. Niesen, G. Weyer, R. Sielemann and G. Langouche, in:Hyperfine Interaction of Defects in Semiconductors, ed. G. Langouche (Elsevier, Amsterdam, 1992), ch. 1 (in press)

    Google Scholar 

  13. G.M. Kalvius, G.D. Sprouse and S.S. Hanna, in:Hyperfine Structure and Nuclear Radiation, ed. E. Matthias and D.A. Shirley (North-Holland, Amsterdam, 1968), p. 686.

    Google Scholar 

  14. G.L. Latshaw, Ph.D. Thesis, Stanford University (1971); G.L. Latshaw, P.B. Russel and S.S. Hanna, Hyp. Int. 8(1980)105.

  15. B.D. Sawicka, J.A. Sawicki and J. Stanek, J. de Phys. 37(1976)C6–879, and further references cited in [1].

    Google Scholar 

  16. G. Langouche, I. Dézsi, J. De Bruyn, M. Van Rossum and R. Coussement, J. de Phys. 40(1979)C2–153, and further references cited in [1].

    Google Scholar 

  17. B.D. Sawicka and J.A. Sawicki, Phys. Lett. A64(1977)311.

    Article  ADS  Google Scholar 

  18. G. Langouche, I. Dézsi, M. Van Rossum, J. De Bruyn and R. Coussement, Phys. Stat. Sol. b 89(1978)K17.

    Google Scholar 

  19. J.A. Sawicki and B.D. Sawicka, Phys. Stat. Sol. b 86(1978)K159.

    Google Scholar 

  20. G. Langouche, M. de Potter, I. Dézsi and M. Van Rossum, Rad. Eff. Lett. 67 (1982)404.

    Google Scholar 

  21. G. Langouche, N.S. Dixon, L.A. Fritz and S.S. Hanna, Hyp. Int. 8(1980)129.

    Article  Google Scholar 

  22. G. Langoche and M. de Potter, Nucl. Instr. Meth. B19/20(1987)322.

    Google Scholar 

  23. P. Schwalbach, S. Laubach, M. Hartick, E. Kankeleit, B. Keck, M. Menningen and R. Sielemann, Phys. Rev. Lett. 64(1990)1274.

    Article  ADS  Google Scholar 

  24. M. Lannoo, A. Svane, H. Overhof and H. Katayama-Yoshida, in:Hyperfinre Interaction of Defects in Semiconductors, ed. G. Langouche (Elsevier, Amsterdam, 1992), ch. 9 (in press).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

In honor of S.S. Hanna, on the occasion of his retirement.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Langouche, G. The Mössbauer search for Fe in Si. Hyperfine Interact 72, 215–228 (1992). https://doi.org/10.1007/BF02398866

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02398866

Keywords

Navigation