Abstract
In this review paper, a series of Mössbauer experiments on Fe in Si, spread over almost thirty years, is discussed. In early Mössbauer experiments, the role of precipitate formation during diffusion was insufficiently realized. Later, an apparent inconsistency was observed between ion implantation experiments by recoil implantation of Coulomb excited atoms and by conventional ion implantation. This inconsistency is removed by recent high-resolution Coulomb excitation recoil implantation studies and by ion implantation experiments at the temperature of liquid helium. These studies lead to an unambiguous identification of interstitial Fe and Co in Si. Finally, the present status of the theoretical predictions on the isomer shift of Fe in Si is reviewed.
Similar content being viewed by others
References
Recent review articles on Mössbauer Spectroscopy studies in semiconductors: G. Langouche, in.Mössbauer Spectroscopy Applied to Inorganic Chemistry, Vol. 3, ed. G.J. Long and F. Grandjean (Plenum, New York, 1989), p. 445; D.L. Williamson, Hyp. Int. 40(1988)249. A.R. Regel and P.P. Seregin, Sov. Phys. Semicond. 18(1984)723.
G. Langouche, M. de Potter and D. Schroyen, Phys. Rev. Lett. 53(1984)1364.
W. Bergholz, Physica B116(1983)312.
I. Dézsi, H. Engelmann, U. Gonser and G. Langouche, Hyp. Int. 33(1987)161.
M. Paseman, W. Bergholz and W. Schröter, Phys. Stat. Sol. A81(1984)273.
S.B. Ogale, R. Joshee, V.P. Godbole, S.M. Kanetkar and V.G. Bhide, J. Appl. Phys. 57(1985)2915.
A. Vantomme, M.F. Wu, I. Dézsi, G. Langouche, K. Maex and J. Vanhellemont, Mat. Sci. Eng. B4(1989)157.
M. de Coster, H. Pollak and S. Amelinckx, in:Proc. 2nd Int. Conf. on the Mössbauer Effect, ed. D.M.J. Compton and A.H. Schoen (Wiley, New York, 1962), p. 289.
P.C. Norem and G.K. Wertheim, J. Phys. Chem. Solids 23(1962)1111.
E.R. Weber, Appl. Phys. A30(1983)1.
W. Bergholz, S. Damgaard, J.W. Petersen and G. Weyer, Phys. Stat. Sol. a 75(1983) 289.
D.L. Williamson, B. Niesen, G. Weyer, R. Sielemann and G. Langouche, in:Hyperfine Interaction of Defects in Semiconductors, ed. G. Langouche (Elsevier, Amsterdam, 1992), ch. 1 (in press)
G.M. Kalvius, G.D. Sprouse and S.S. Hanna, in:Hyperfine Structure and Nuclear Radiation, ed. E. Matthias and D.A. Shirley (North-Holland, Amsterdam, 1968), p. 686.
G.L. Latshaw, Ph.D. Thesis, Stanford University (1971); G.L. Latshaw, P.B. Russel and S.S. Hanna, Hyp. Int. 8(1980)105.
B.D. Sawicka, J.A. Sawicki and J. Stanek, J. de Phys. 37(1976)C6–879, and further references cited in [1].
G. Langouche, I. Dézsi, J. De Bruyn, M. Van Rossum and R. Coussement, J. de Phys. 40(1979)C2–153, and further references cited in [1].
B.D. Sawicka and J.A. Sawicki, Phys. Lett. A64(1977)311.
G. Langouche, I. Dézsi, M. Van Rossum, J. De Bruyn and R. Coussement, Phys. Stat. Sol. b 89(1978)K17.
J.A. Sawicki and B.D. Sawicka, Phys. Stat. Sol. b 86(1978)K159.
G. Langouche, M. de Potter, I. Dézsi and M. Van Rossum, Rad. Eff. Lett. 67 (1982)404.
G. Langouche, N.S. Dixon, L.A. Fritz and S.S. Hanna, Hyp. Int. 8(1980)129.
G. Langoche and M. de Potter, Nucl. Instr. Meth. B19/20(1987)322.
P. Schwalbach, S. Laubach, M. Hartick, E. Kankeleit, B. Keck, M. Menningen and R. Sielemann, Phys. Rev. Lett. 64(1990)1274.
M. Lannoo, A. Svane, H. Overhof and H. Katayama-Yoshida, in:Hyperfinre Interaction of Defects in Semiconductors, ed. G. Langouche (Elsevier, Amsterdam, 1992), ch. 9 (in press).
Author information
Authors and Affiliations
Additional information
In honor of S.S. Hanna, on the occasion of his retirement.
Rights and permissions
About this article
Cite this article
Langouche, G. The Mössbauer search for Fe in Si. Hyperfine Interact 72, 215–228 (1992). https://doi.org/10.1007/BF02398866
Issue Date:
DOI: https://doi.org/10.1007/BF02398866