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Mössbauer and channeling measurements on buried layers of CoSi2 in Si

  • Radiation Damage and Implantation
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Abstract

Single crystalline multilayered structures of Si/CoSi2/Si were made by high dose implantation of Co into a Si wafer which was subsequently annealed. These structures were then investigated with both Mössbauer spectroscopy and channeling measurements. The experiments show that a change occurs in the structure of the CoSi2 at a temperature between 150 K and 220 K.

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Authors and Affiliations

  1. Laboratorium voor Algemene Natuurkunde, MSC, Westersingel 34, NL-9718 CM, Groningen, The Netherlands

    W. G. Spanninga, P. J. M. Smulders & L. Niesen

Authors
  1. W. G. Spanninga
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  2. P. J. M. Smulders
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  3. L. Niesen
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Spanninga, W.G., Smulders, P.J.M. & Niesen, L. Mössbauer and channeling measurements on buried layers of CoSi2 in Si. Hyperfine Interact 70, 927–930 (1992). https://doi.org/10.1007/BF02397479

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  • DOI: https://doi.org/10.1007/BF02397479

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