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Persistent photoionisation of the DX-center in Te-implanted GaAs

  • Radiation Damage and Implantation
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Abstract

Mössbauer measurements were performed on GaAs implanted with129mTe-isotopes. A defect configuration is observed which is characterized by a large electric field gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called “DX-center”. The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.

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Authors and Affiliations

  1. Instituut voor Kern- en Stralingsfysika, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001, Heverlee, Belgium

    H. Bemelmans & G. Langouche

  2. Interuniversity Institute of Microelectronics (IMEC), Kapeldreef 75, B-3001, Heverlee, Belgium

    G. Borghs

Authors
  1. H. Bemelmans
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  2. G. Borghs
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  3. G. Langouche
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Bemelmans, H., Borghs, G. & Langouche, G. Persistent photoionisation of the DX-center in Te-implanted GaAs. Hyperfine Interact 70, 909–912 (1992). https://doi.org/10.1007/BF02397475

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  • DOI: https://doi.org/10.1007/BF02397475

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