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4He adsorption and superfluid transition on C60

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Abstract

We present adsorption isotherm data of4He on C60 for 1.50 K<T<1.68 K determined by measurements of the frequency of quartz crystal microbalances (QCM’s) coated with C60 films. We find a Kosterlitz-Thouless transition with a jump in the areal superfluid density close to predictions. By comparing the adsorbed4He on two QCM’s we derive an upper limit for the amount of4He intercalated into C60 at low temperature of 0.054He atoms per C60 molecule. The low coverage portion of the adsorption data shows an apparent excess adsorption of4He onto the C60.

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Authors and Affiliations

  1. Laboratory for Low Temperature Physics, Department of Physics and Astronomy, University of Massachusetts at Amherst, 01003, Amherst, Massachusetts, USA

    W. Teizer & R. B. Hallock

  2. Department of Physics, University of Florida, 32611, Gainesville, Florida, USA

    A. F. Hebard

Authors
  1. W. Teizer
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  2. R. B. Hallock
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  3. A. F. Hebard
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Teizer, W., Hallock, R.B. & Hebard, A.F. 4He adsorption and superfluid transition on C60 . J Low Temp Phys 109, 243–265 (1997). https://doi.org/10.1007/BF02396734

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