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Muon bonding versus muonium formation: Muon-Spin-Relaxation in α-Al2O3

  • Muonium in Semiconductors and Insulators
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Abstract

Results of Muon-Spin-Relaxation (μSR) experiments on well-defined single crystals of corundum (α-Al2O3) are reported. Major issue in this study is the controversy of muon bonding or muonium formation in insulators. Transverse, zero-field and longitudinal field measurements were performed as a function of temperature or applied field. The obtained results indicate that muon-oxygen bonding occurs in α-Al2O3, having (at least) two (μO) states as found earlier for α-Fe2O3. The occurrence of a 10% missing fraction suggests Mu states, although Mu was not observed in our measurements. These results and their implications are discussed in light of other experimental μSR studies on insulating oxides and the above-mentioned controversy.

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Authors and Affiliations

  1. San José State University, 95192, San José, CA, USA

    C. Boekema

  2. Texas Tech University, Lubbock, TX, USA

    K. C. Chan & R. L. Lichti

  3. University of Wyoming, Laramie, WY, USA

    A. B. Denison

  4. Los Alamos National Laboratory, Los Alamos, NM, USA

    D. W. Cooke, R. H. Heffner, R. L. Hutson & M. E. Schillaci

Authors
  1. C. Boekema
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  2. K. C. Chan
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  3. R. L. Lichti
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  4. A. B. Denison
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  5. D. W. Cooke
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  6. R. H. Heffner
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  7. R. L. Hutson
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  8. M. E. Schillaci
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Boekema, C., Chan, K.C., Lichti, R.L. et al. Muon bonding versus muonium formation: Muon-Spin-Relaxation in α-Al2O3 . Hyperfine Interact 32, 667–675 (1986). https://doi.org/10.1007/BF02394971

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  • DOI: https://doi.org/10.1007/BF02394971

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