Hyperfine Interactions

, Volume 32, Issue 1–4, pp 619–624 | Cite as

Vacancy associated model for anomalous muonium in diamond, silicon and germanium

  • N. Sahoo
  • K. C. Mishra
  • T. P. Das
  • P. C. Schmidt
Muonium in Semiconductors and Insulators


Through first-principles investigations on a number of models for anomalous muonium in diamond using the Unrestricted Hartree-Fock Cluster procedure, it is demonstrated that a muonium trapped near a double-positively charged vacancy is the most viable model for this center. This model is shown to successfully explain all the observed features of the hyperfine tensors A in diamond, silicon and germanium, namely, oblateness, opposite signs of A and A in diamond and same signs for silicon and germanium, the trend in the strengths of the hyperfine tensors from diamond to germanium and the negative sign for A in diamond.


Silicon Thin Film Germanium Opposite Sign Negative Sign 
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Copyright information

© J.C. Baltzer A.G., Scientific Publishing Company 1986

Authors and Affiliations

  • N. Sahoo
    • 1
  • K. C. Mishra
    • 1
  • T. P. Das
    • 1
  • P. C. Schmidt
    • 2
  1. 1.Department of PhysicsState University of New York at AlbanyNew YorkUSA
  2. 2.Physikalische Chemie IIITechnische Hochschule DarmstadtDarmstadtWest-Germany

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