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Hyperfine Interactions

, Volume 32, Issue 1–4, pp 619–624 | Cite as

Vacancy associated model for anomalous muonium in diamond, silicon and germanium

  • N. Sahoo
  • K. C. Mishra
  • T. P. Das
  • P. C. Schmidt
Muonium in Semiconductors and Insulators

Abstract

Through first-principles investigations on a number of models for anomalous muonium in diamond using the Unrestricted Hartree-Fock Cluster procedure, it is demonstrated that a muonium trapped near a double-positively charged vacancy is the most viable model for this center. This model is shown to successfully explain all the observed features of the hyperfine tensors A in diamond, silicon and germanium, namely, oblateness, opposite signs of A and A in diamond and same signs for silicon and germanium, the trend in the strengths of the hyperfine tensors from diamond to germanium and the negative sign for A in diamond.

Keywords

Silicon Thin Film Germanium Opposite Sign Negative Sign 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© J.C. Baltzer A.G., Scientific Publishing Company 1986

Authors and Affiliations

  • N. Sahoo
    • 1
  • K. C. Mishra
    • 1
  • T. P. Das
    • 1
  • P. C. Schmidt
    • 2
  1. 1.Department of PhysicsState University of New York at AlbanyNew YorkUSA
  2. 2.Physikalische Chemie IIITechnische Hochschule DarmstadtDarmstadtWest-Germany

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