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Influence of grain boundaries on the recombination rate in germanium

  • Defects and Radiation Damage
  • Defects in Semiconductiors
  • Published:
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Abstract

The electronic properties of the In (→ Cd) acceptor are studied in polycrystalline germanium by the perturbed angular correlation method (PAC). The time independent anisotropy reveals a strong temperature dependence. This behaviour can be explained quantitatively by a model based on recombination processes at the Cd acceptor. The recombination rates depend on the annealing procedure of the samples, thus indicating a strong influence of the grain boundaries.

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Wolf, H., Forkel, D., Iwatschenko-Borho, M. et al. Influence of grain boundaries on the recombination rate in germanium. Hyperfine Interact 35, 723–727 (1987). https://doi.org/10.1007/BF02394485

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  • DOI: https://doi.org/10.1007/BF02394485

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