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Hyperfine Interactions

, Volume 35, Issue 1–4, pp 723–727 | Cite as

Influence of grain boundaries on the recombination rate in germanium

  • H. Wolf
  • D. Forkel
  • M. Iwatschenko-Borho
  • S. Malzer
  • M. Renn
  • W. Witthuhn
Defects and Radiation Damage Defects in Semiconductiors

Abstract

The electronic properties of the In (→ Cd) acceptor are studied in polycrystalline germanium by the perturbed angular correlation method (PAC). The time independent anisotropy reveals a strong temperature dependence. This behaviour can be explained quantitatively by a model based on recombination processes at the Cd acceptor. The recombination rates depend on the annealing procedure of the samples, thus indicating a strong influence of the grain boundaries.

Keywords

Thin Film Anisotropy Recombination Germanium Strong Influence 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    D. Forkel, H. Föttinger, M. Iwatchenko-Borho, S. Malzer, F. Meyer, W. Witthuhn, H. Wolf, Proc. 14th Int. Conf. on Defects in Semiconductors, Paris, 1986, to be publishedGoogle Scholar
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    D. Forkel, F. Meyer, W. Witthuhn, and H. Wolf, this conference, to be publishedGoogle Scholar
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Copyright information

© J.C. Baltzer A.G., Scientific Publishing Company 1987

Authors and Affiliations

  • H. Wolf
    • 1
  • D. Forkel
    • 1
  • M. Iwatschenko-Borho
    • 1
  • S. Malzer
    • 1
  • M. Renn
    • 1
  • W. Witthuhn
    • 1
  1. 1.Physikalisches Institut der Universität Erlangen-NürnbergErlangenW-Germany

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