Abstract
Czochralski grown silicon annealed at 750° C has been investigated with high-resolution electron microscopy, Hall effect and infrared measurement. Crystalline plate-like precipitates were observed and identified asβ-cristobalite. The structure of the coherent interface of the new phase and its connection with the origin of the new donor are discussed.
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G. A. ROZGONYI, R. P. DEYSHER and C. W. PEARCE,J. Electrochem. Soc. 123 (1976) 1910.
T. Y. TAN, E. E. GARDNER and W. K. TICE,Appl. Phys. Lett. 30 (1977) 175.
S. M. HU,J. Vac. Sci. Technol. 14 (1977) 17.
F. A. PONCE, S. HAHN, T. YAMASHITA, M. SCOTT and J. R. CARRUTHERS, in “Microscopy of Semiconducting Materials, 1983”, edited by A. G. Cullis and D. C. Joy (Conference Series No. 67, Institute of Physics, London, 1983) p. 65.
H. BENDER,Phys. Status Solidi a 86 (1984) 245.
W. A. TILLER, S. HAHN and F. A. PONCE,J. Appl. Phys. 59 (1986) 3255.
Z. G. XIAO, L. C. QIN and X. W. LIN,Mater. Sci. Engng 92 (1987) L9.
P. CAPPER, A. W. JONES, E. J. WALLHOUSE and J. G. WILKES,J. Appl. Phys. 48 (1977) 1646.
A. KANAMORI and M. KANAMORI, —ibid.56 (1979) 8095.
A. BOURRET, J. THIBAULT-DESSEAUX and D. N. SEIDMAN, —ibid.55 (1984) 825.
R. W. G. WYCKOFF, in “Crystal Structure” 2nd edn, Vol. 1, (Wiley, New York, 1963) p. 318.
F. HERMAN, I. P. BATRA and R. V. KASOWSKI, in “The Physics and Chemistry of SiO2 and its Interfaces” edited by S. T. Pantelides (Pergamon, New York, 1978) p. 333.
K. V. RAVI,J. Electrochem. Soc. 121 (1974) 1090.
P. GOODMAN and A. F. MOODIE,Acta Crystallogr. A30 (1974) 280.
C. S. FULLER and R. A. LOGAN,J. Appl. Phys. 28 (1957) 1427.
W. KAISER, H. L. FRISCH and H. REISS,Phys. Rev. 112 (1958) 1546.
A. OHSAWA, R. TAKIZAWA, K. HONDA, A. SHIBATOMI and S. OHKAWA,J. Appl. Phys. 53 (1982) 5733.
L. ZHONG, J. X. SHI and S. M. SHE, in “Semiconductor Silicon 1986”, edited by H. R. Huff, T. Abe and B. Kolbeson (Electrochem. Society, Pennington, New Jersey, 1986) p. 813.
V. CAZCARRA and P. ZUNINO,J. Appl. Phys. 51 (1980) 4206.
P. FRAUNDORF, G. K. FRAUNDORF and R. A. CRAVEN, in Proceedings 3rd International Symposium on VLSI Science and Technology, edited by W. M. Bullis and S. Broydo (Electrochemical Society, Pennington, New Jersey, 1985) p. 436.
W. BERGHOLZ, J. L. HUTCHISON and G. R. BOOKER, in “Semiconductor Silicon 1986,” edited by H. R. Huff, T. Abe and B. Kolbeson (Electrochemical Society, Pennington, New Jersey, 1986) p. 874.
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Xiao, Z.G., Lin, X.W., Liu, G.Z. et al. Crystalline plate-like SiO2 precipitates in silicon and their relation with new donors. J Mater Sci 24, 3573–3576 (1989). https://doi.org/10.1007/BF02385742
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DOI: https://doi.org/10.1007/BF02385742