Abstract
The article analyzes the formation of localized spatial structures in an optically bistable resonance-free system with a nonlinear temperature dependence of the relaxation time of free charge carries. The light-induced electrical field does not introduce qualitative changes in their characteristics.
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References
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Additional information
This research was partially supported by grant No. 5142 of the program “Russian Universities: Basic Research.”
Translated from Chislennye Metody v Matematicheskoi Fizike, Moscow State University, pp. 53–66, 1998.
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Trofimov, V.A., Bondarenko, O.S. Formation of laser-induced localized spatial structures in semiconductors in the presence of optical bistability. Comput Math Model 10, 267–273 (1999). https://doi.org/10.1007/BF02358946
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DOI: https://doi.org/10.1007/BF02358946