Solid-state potentiometer

Abstract

A particular transducer application of a piezoresistive semiconductor is presented. This application and its associated engineering approaches are treated as a medium for (1) clarification of a structural engineering problem which arises in single-crystal semiconductor studies; and (2) definition of an error in the design approaches of suppliers and users of piezoresistive devices.

The design approaches are based on two assertions: (1) the future of piezoresistive sensors lies in utilization of single-crystal semiconductor structural subsystems having sensors and circuits as integral parts of the singlecrystal structures, not in gluing, potting, soldering or alloying sensors and circuits to conventional structures; and (2) the design and positioning of future sensors with respect to stress-producing phenomena, and the instrumentation to properly tailor the piezoresistive response into intelligent signals should not resemble wire strain gages and piezoelectric devices. The design thinking applied to piezoresistive devices need not be prejudiced by today’s state-of-the-art.