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Residual stresses in evaporated AI-Si films

Authors report that residual stresses in evaporated film can be reduced by post-thermal treatment

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Abstract

Residual stresses in vacuum evaporated thin Al-Si films were evaluated by measuring the deflection of a thin cantilevered substrate during removal of the film. Post-thermal treatment and thermal cyclings at temperatures between −269° C and 560° C were also introduced to determine their effects on the residual stresses of the films.

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References

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Authors and Affiliations

  1. IBM Components Division, East Fishkill Facility, Hopewell Junction, N. Y.

    N. G. Wu (Senior Engineer) & Q. K. Yuan (Staff Engineer)

Authors
  1. N. G. Wu
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  2. Q. K. Yuan
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Wu, N.G., Yuan, Q.K. Residual stresses in evaporated AI-Si films. Experimental Mechanics 9, 519–522 (1969). https://doi.org/10.1007/BF02319696

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  • DOI: https://doi.org/10.1007/BF02319696

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