Abstract
Hydrogen surface contamination and depth profiles can be measured by the resonant nuclear reactions1H(19F, αγ)16O and1H(15N, αγ)12C. The method was applied to study hydrogen-implanted silicon, amorphous silicon layers and silicon oxide films produced by anodic oxidation.
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R. C. ROSS, I. S. T. TSONG, R. MESSIER, J. Vac. Sci. Technol., 20 (1982) 406.
H. R. SHANKS, F. R. JEFFREY, M. E. LOWRY, J. de Physique, 42 (1981) C4–773.
M. W. BRODSKY, M. CARDONA, J. J. CUOMO, Phys. Rev., B16 (1977) 3556.
J. F. ZIEGLER, et al., Nucl. Instr. Methods, 149 (1978) 19.
W. A. LANFORD, Nucl. Instr. Methods, 149 (1977) 1.
J. F. ZIEGLER, Handbook of Stopping Cross Sections for Energetic Ions in all Elements, Vol. 5, Pergamon Press, 1980.
F. AJZENBERG-SELOVE, Nucl. Phys. A375 (1982) 46.
D. DIEUMEGARD, B. MAUREL, G. AMSEL, Nucl. Instr. Methods, 168 (1980) 93.
I. GOLICHEFF, M. LOEUILLET, CH. ENGELMANN, J. Radioanal. Chem., 12 (1972) 233.
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Rudolph, W., Bauer, C., Gippner, P. et al. Hydrogen determination by means of the1H(19F, αγ)16 O and1H(15N, αγ)12C resonance reactions. Journal of Radioanalytical and Nuclear Chemistry, Articles 83, 99–105 (1984). https://doi.org/10.1007/BF02209299
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DOI: https://doi.org/10.1007/BF02209299