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Simulations and experiments of mode-locking of semiconductor lasers: pulse evolution, frequency detuning, and bias dependence

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Abstract

Simulations of a mode-locked diode laser based on a travelling-wave rate-equation model have been compared with experiments. The pulse measurement technique involved a conventional intensity autocorrelator together with an internally generated second-harmonic emission measurement set-up. The latter is ideal for systematic relative measurements. For the first time, pulse evolution as a function of the number of round-trips was measured. Short optical pulses were obtained after approximately 40 round-trips. The experimental and simulated detuning range was about 1 MHz and the d.c. bias dependence was investigated.

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Authors and Affiliations

  1. Department of Physics II, Royal Institute of Technology, S-100 44, Stockholm, Sweden

    Peter Blixt & Arūnas Krotkus

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  1. Peter Blixt
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  2. Arūnas Krotkus
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On leave from Physics Institute of the Lithuanian Academy of Sciences, 232 600 Vilnius, Lithuania.

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Blixt, P., Krotkus, A. Simulations and experiments of mode-locking of semiconductor lasers: pulse evolution, frequency detuning, and bias dependence. Opt Quant Electron 22, 561–570 (1990). https://doi.org/10.1007/BF02189506

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