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Non-linear refractive index of silicon and GaAs induced by free-carrier generation

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Abstract

The practicality is demonstrated of two-exposure picosecond holographic interferometry to study the real part of the non-linear susceptibility of semiconductors resulting from free-carrier generation. The interference patterns are recorded in the near IR spectral range and no special treatment of the sample is required. Good correspondence is established of the data obtained to the model of plasma-induced refractive index (Drude relationship).

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Authors and Affiliations

  1. A. F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, Leningrad, USSR

    A. A. Bugayev

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  1. A. A. Bugayev
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Bugayev, A.A. Non-linear refractive index of silicon and GaAs induced by free-carrier generation. Opt Quant Electron 22, 485–489 (1990). https://doi.org/10.1007/BF02189499

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  • DOI: https://doi.org/10.1007/BF02189499

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