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A novel structure of visible semiconductor lasers

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Abstract

Terraced substrate inner current stripe lasers emitting in the range of 750–780 nm are developed with very simple fabrication processes. The lasers have good performance of cw room temperature, linear light-current output over 30 mW per facet and maintain stable fundamental transverse and longitudinal mode of 2–4 times current threshold. The current threshold of 25 mA under cw room temperature operation has been achieved.

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Authors and Affiliations

  1. Department of Electronics Science, Jilin University, 130021, Changchun, People's Republic of China

    Xiaobo Zhang, Guotong Du, Zheng Zou, Fanghal Zhao & Dingsan Gao

Authors
  1. Xiaobo Zhang
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  2. Guotong Du
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  3. Zheng Zou
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  4. Fanghal Zhao
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  5. Dingsan Gao
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Zhang, X., Du, G., Zou, Z. et al. A novel structure of visible semiconductor lasers. Opt Quant Electron 22, 385–389 (1990). https://doi.org/10.1007/BF02189221

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  • DOI: https://doi.org/10.1007/BF02189221

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