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Optically induced index change in GaAs by laser diode: Measurement method and analysis to realize an all-optical switch

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Abstract

In this paper the possibility to realize an all-optical switch on GaAs, using a semiconductor laser as a pump beam, is investigated. An estimate for the mean value of the refractive index change (Δn) of the material is calculated as a function of the pump power. A method for the measurement of Δn is proposed, based on the mathematical relationships between the propagation characteristics of the guided mode and the refractive index change.

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Authors and Affiliations

  1. Fondazione Ugo Bordoni, Viale Europa 190, 00144, Roma, Italy

    L. Piccari & S. Scotti

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  1. L. Piccari
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  2. S. Scotti
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Piccari, L., Scotti, S. Optically induced index change in GaAs by laser diode: Measurement method and analysis to realize an all-optical switch. Opt Quant Electron 21, 499–505 (1989). https://doi.org/10.1007/BF02189130

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  • DOI: https://doi.org/10.1007/BF02189130

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