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Characterization of titanium nitride films and sputter target material by 14 MeV neutron activation analysis

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Abstract

Titanium nitride films /3.0 and 3.8 microns/ deposited by the magnetron sputtering technique on silicon substrates and the commercially procured compound sputter target material are characterized for their bulk compositions by non-destructive 14 MeV neutron activation analysis /NAA/. The practical sensitivity and precision obtained under the present experimental conditions are 0.7 mg and 5% in the case of titanium and 0.1 mg and 8% in the case of nitrogen, respectively. The bulk composition of the films seems to conform to stoichiometric nitride, TiN, while the presence of oxygen could not be precluded in the compound target material.

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Authors and Affiliations

  1. AT and T Engineering Research Center, 08540, Princeton, New Jersey, USA

    S. Yegnasubramanian, R. F. Roberts, A. L. Helms Jr. & E. J. Canning

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  1. S. Yegnasubramanian
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  2. R. F. Roberts
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  3. A. L. Helms Jr.
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  4. E. J. Canning
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Yegnasubramanian, S., Roberts, R.F., Helms, A.L. et al. Characterization of titanium nitride films and sputter target material by 14 MeV neutron activation analysis. Journal of Radioanalytical and Nuclear Chemistry Letters 118, 339–348 (1987). https://doi.org/10.1007/BF02170467

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  • DOI: https://doi.org/10.1007/BF02170467

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