Abstract
The pape analyses the energy deposition of secondary electrons in SiO2. The energy deposition is shortly described for recoil electrons with energy from 10 eV. The mangitude of energy required for production of one electron-hole pair and the value of corresponding mean free path are presented.
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Petr, I. Production of electron-hole pairs in SiO2 films. Journal of Radioanalytical and Nuclear Chemistry Letters 95, 195–200 (1985). https://doi.org/10.1007/BF02168280
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DOI: https://doi.org/10.1007/BF02168280