Abstract
Preparation of thin films of lanthanide (Ln) sulfides has been studied by the chemical vapor deposition (CVD) method, using metal β-diketonato chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and reactant H2S gas as starting materials. Two kinds of sulfides, Ln2O2S oxysulfides and EuS monosulfide, were obtained as thin films at temperatures as low as 390–570 °C. The CVD method was confirmed to be suited for the above purpose.
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Amano, R., Shiokawa, Y. Preparation of lanthanide sulfide films by chemical vapor deposition using β-diketone chelates. Journal of Radioanalytical and Nuclear Chemistry Letters 155, 201–210 (1991). https://doi.org/10.1007/BF02166645
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DOI: https://doi.org/10.1007/BF02166645