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Hyperfine Interactions

, Volume 15, Issue 1–4, pp 495–498 | Cite as

Sn-vacancy defects in GaP

  • G. Weyer
  • J. W. Petersen
  • S. Damgaard
Defects and Radiation Damage Damage in Semiconductors

Abstract

Complex119Sn-vacancy defects in GaP have been studied by Mössbauer-emission spectroscopy on the 24-keV γ radiation of119Sn. The defects were created by ion implantations of radioactive119In+ and119Sb+, which in their decays both populate the Mössbauer state of119Sn. The radiogenic119Sn-vacancy defects are proposed to consist of substitutional119Sn on Ga or P sites, respectively, associated with (P or Ga) vacancies.

Keywords

Radiation Spectroscopy Thin Film 
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Copyright information

© J.C. Baltzer Scientific Publishing Company 1983

Authors and Affiliations

  • G. Weyer
    • 1
    • 2
  • J. W. Petersen
    • 1
    • 2
  • S. Damgaard
    • 1
    • 2
  1. 1.Institute of PhysicsUniversity of AarhusAarhus CDenmark
  2. 2.ISOLDE CollaborationCERNGenevaSwitzerland

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