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On the determination of carbon and oxygen impurities in silicon by3He activation analysis

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Abstract

Carbon and oxygen impurities in silicon have been determined by 7.00 MeV3He activation analysis. The detection limits obtained for interference-free conditions are 0.1 ppb (wt) for carbon and 1.0 ppb (wt) for oxygen in silicon.

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References

  1. T. NOZAKI, Y. YATSURUGI, N. AKIYAMA, J. Radioanal. Chem., 4 (1970) 87.

    Google Scholar 

  2. G. I. ALEKSANDROVA, A. M. DEMIDOV, G. A. KOTEL'NIKOV, G. P. PLASHAKOVA, G. V. SUKHOV, D. YA. CHOPOROV, G. I. SHMANENKOV, At. Energ. (USSR), 23 (1967) 106.

    Google Scholar 

  3. CH. ENGELMANN, J. Radioanal. Chem., 7 (1971) 89.

    Google Scholar 

  4. E. A. SCHWEIKERT, H. L. ROOK, Anal. Chem., 42 (1970) 1525.

    Article  Google Scholar 

  5. M. L. BÖTTGER, D. BIRNSTEIN, W. HELBIG, S. NIESE, J. Radioanal. Chem., 58 (1980) 173.

    Google Scholar 

  6. H. P. DO, P. DEBEFVE, C. FRIEDLI, P. LERCH, Radiochem. Radioanal. Letters, 42 (1980) 197.

    Google Scholar 

  7. J. B. CUMMING, BNL-6470; NAS-NS 3107, G. D. O'KELLY, (Ed.), Proc. Symp. Gatlinburg, TN, October 1962.

  8. H. P. YULE, Nucl. Phys. A., 94 (1967) 442.

    Article  Google Scholar 

  9. L. A. CURRIE, Anal. Chem., 40 (1968) 586.

    Article  Google Scholar 

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Author notes

  1. A. Q. Sanni

    Present address: the University of Ibadan, Nigeria

  2. N. G. Roché

    Present address: Texaco Chemical Company, 78716, Austin, TX, USA

  3. H. J. Dowell & T. H. Ramsey

    Present address: Texas Instruments, Inc., 75265, Dallas, TX, USA

Authors and Affiliations

  1. Center for Trace Characterization Department of Chemistry, Texas A&M University, 77843, College Station, TX, (USA)

    A. Q. Sanni, N. G. Roché, H. J. Dowell, E. A. Schweikert & T. H. Ramsey

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  1. A. Q. Sanni
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  2. N. G. Roché
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  3. H. J. Dowell
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  4. E. A. Schweikert
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  5. T. H. Ramsey
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Sanni, A.Q., Roché, N.G., Dowell, H.J. et al. On the determination of carbon and oxygen impurities in silicon by3He activation analysis. Journal of Radioanalytical and Nuclear Chemistry, Articles 81, 125–129 (1984). https://doi.org/10.1007/BF02132927

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  • DOI: https://doi.org/10.1007/BF02132927

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