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Diffusion model of nonuniformity of reactive etching

  • Approximate Methods of Solution of Boundary-Value Problems of Mathematical Physics
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Abstract

We solve the diffusion problem that determines the distribution of concentration of chemically active particles in a diode plasmatron and the degree of etching nonuniformity, allowing for generation and regeneration of chemically active particles in the plasma volume. It is shown that etching nonuniformity can be controlled by additional injection of an active gas mixture into the interelectrode space according to a given law.

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References

  1. A. G. Nagy, “Radial rate nonuniformity in reactive ion etching,” J. Electrochem. Soc.,131, No. 8, 1871–1875 (1984).

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  2. A. N. Tikhonov and A. A. Samarskii, Equations of Mathematical Physics [in Russian], Moscow (1972).

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Authors and Affiliations

  1. Institute of Cybernetics of the Ukrainian Academy of Sciences, Ukraine

    I. V. Medvedev, G. A. Chechko, N. I. Khodakovskii & V. N. Sklepovoi

  2. Kiev University, Ukraine

    I. V. Medvedev, G. A. Chechko, N. I. Khodakovskii & V. N. Sklepovoi

Authors
  1. I. V. Medvedev
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  2. G. A. Chechko
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  3. N. I. Khodakovskii
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  4. V. N. Sklepovoi
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Additional information

Translated from Vychislitel'naya i Prikladnaya Matematika, No. 73, pp. 48–52, 1992.

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Medvedev, I.V., Chechko, G.A., Khodakovskii, N.I. et al. Diffusion model of nonuniformity of reactive etching. J Math Sci 71, 2662–2665 (1994). https://doi.org/10.1007/BF02114041

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  • DOI: https://doi.org/10.1007/BF02114041

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