Preparation of lanthanide, thorium and uranium oxide films by chemical vapor deposition using β-diketone chelates
Preparation of thin film deposits of lanthanide, thorium and uranium oxides has been studied by chemical vapor deposition (CVD) method using β-diketonate metal chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and some reactant gases as starting materials. The deposition process was carried out using a special apparatus designed for the CVD method at atmospheric pressure and temperatures as low as 400–600°C.As a result, it was demonstrated that each chelate used was well suited for the above purpose by its high volatility and reactivity with the reactant, especially with water vapor.
KeywordsThin Film Uranium Water Vapor Chemical Vapor Deposition Volatility
Unable to display preview. Download preview PDF.
- 1.K. F. JENSEN, Microelectronics Processing, D. W. HESS, K. F. JENSEN (Eds), American Chemical Society, Washington 1989, p. 199.Google Scholar
- 4.R. E. SIEVERS, E. SADLOWSKI, Science, 201 (1978) 217.Google Scholar
- 5.M. SAKANOUE, R. AMANO, Transplutonium 1975, W. MULLER, R. LINDNER (Eds), North-Holland Publishing Company, Amsterdam 1976, p. 123.Google Scholar
- 6.H. YAMANE, H. KUROSAWA, T. HIRAI, Chem. Lett., (1988) 939.Google Scholar
- 8.K. NATIO, N. KAMEGASHIRA, Adv. Nucl. Technol. 9 (1976) 99.Google Scholar
- 10.F. WIEGEL, H. R. HOEKSTRA, The Chemistry of the Actinide Elements, J. J. KATZ, G. T. SEABORG, L. R. MORSS (Eds), Chapman and Hall, New York 1986, p. 256.Google Scholar
- 11.J. C. SPIRLET, O. VOGT, Handbook on the Physics and Chemistry of the Actinides Vol. 1, A. J. FREEMAN, G. H. LANDER (Eds), Elsevier Science Publishers B. V., Amsterdam 1984, p. 79.Google Scholar