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Preparation of lanthanide, thorium and uranium oxide films by chemical vapor deposition using β-diketone chelates

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Abstract

Preparation of thin film deposits of lanthanide, thorium and uranium oxides has been studied by chemical vapor deposition (CVD) method using β-diketonate metal chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and some reactant gases as starting materials. The deposition process was carried out using a special apparatus designed for the CVD method at atmospheric pressure and temperatures as low as 400–600°C.As a result, it was demonstrated that each chelate used was well suited for the above purpose by its high volatility and reactivity with the reactant, especially with water vapor.

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Authors and Affiliations

  1. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, 980, Sendai, (Japan)

    Y. Shiokawa, A. Nomura & M. Yagi

  2. School of Allied Medical Professions, Kanazawa University, Kodatsuno 5-11-80, 920, Kanazawa, (Japan)

    R. Amano

Authors
  1. Y. Shiokawa
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  2. R. Amano
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  3. A. Nomura
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  4. M. Yagi
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Shiokawa, Y., Amano, R., Nomura, A. et al. Preparation of lanthanide, thorium and uranium oxide films by chemical vapor deposition using β-diketone chelates. Journal of Radioanalytical and Nuclear Chemistry, Articles 152, 373–380 (1991). https://doi.org/10.1007/BF02104690

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  • DOI: https://doi.org/10.1007/BF02104690

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