Journal of Radioanalytical and Nuclear Chemistry

, Volume 152, Issue 2, pp 373–380 | Cite as

Preparation of lanthanide, thorium and uranium oxide films by chemical vapor deposition using β-diketone chelates

  • Y. Shiokawa
  • R. Amano
  • A. Nomura
  • M. Yagi


Preparation of thin film deposits of lanthanide, thorium and uranium oxides has been studied by chemical vapor deposition (CVD) method using β-diketonate metal chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and some reactant gases as starting materials. The deposition process was carried out using a special apparatus designed for the CVD method at atmospheric pressure and temperatures as low as 400–600°C.As a result, it was demonstrated that each chelate used was well suited for the above purpose by its high volatility and reactivity with the reactant, especially with water vapor.


Thin Film Uranium Water Vapor Chemical Vapor Deposition Volatility 
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Copyright information

© Akadémiai Kiadó 1991

Authors and Affiliations

  • Y. Shiokawa
    • 1
  • R. Amano
    • 2
  • A. Nomura
    • 1
  • M. Yagi
    • 1
  1. 1.Institute for Materials ResearchTohoku UniversitySendai(Japan)
  2. 2.School of Allied Medical ProfessionsKanazawa UniversityKanazawa(Japan)

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