Hyperfine Interactions

, Volume 14, Issue 1, pp 53–88 | Cite as

Mössbauer spectroscopy of laser annealed tellurium implanted silicon (II).129I

  • G. J. Kemerink
  • H. de Waard
  • L. Niesen
  • D. O. Boerma
Article

Abstract

Laser annealed129mTc-implanted silicon has been investigated using129I Mössbauer spectroscopy. At least three dopedependent charge states of substitutional iodine are found. For heavily doped p-type Si a single line component S1, with isomer shift S=0.96(4) mm/s w. r. t. Cu129I and an effective Debye temperature ϕ′=196(3) K is observed. This component is attributed to I++. For compensated Si a single line component, S2, assigned to I+, with S=2.39 (4) mm/s and ϕ′=170 (3) K is found. For n-type Si, a component S3, characterized at 4.2 K by S=2.15 (4) mm/s and a quadrupole splitting eQVzz/h=452 (8) MHz (n≃0)is observed. At higher temperatures S3 shows quadrupole relaxation and its recoilless fraction becomes strongly anisotropic. This behaviour is explained on the basis of a transition from a static to a dynamic Jahn-Teller distortion. Component S3 has been attributed to I0. In the spectra of compensated and n-type Si a less well-defined component Q, with parameters resembling those of S3 but showing no quadrupole relaxation, is observed. This component has tentatively also been assigned to Io. The results can be understood qualitatively on the basis of a simple MO-model.

Keywords

Isomer Shift Quadrupole Split Absorption Area M6ssbauer Spectrum M6ssbauer Spectroscopy 

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Copyright information

© J.C. Baltzer Scientific Publishing Company 1983

Authors and Affiliations

  • G. J. Kemerink
    • 1
  • H. de Waard
    • 1
  • L. Niesen
    • 1
  • D. O. Boerma
    • 1
  1. 1.Laboratorium voor Algemene NatuurkundeRijksuniversiteitGroningenThe Netherlands

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