Abstract
Laser annealed Te-implanted silicon has been investigated using119Sn and125Te Mössbauer spectroscopy. The119Sn Mössbauer spectra consist of a single lorentzian, known to be due to substitutional Sn atoms in Si, independent of the type of doping of the silicon. The results on125Te revcal at least two different components. In heavily doped n-type Si a single line component is observed with an isomer shift of 0.15 (5) mm/s with respect to SnTe and an effective Debye temperature of 207 (3) K. Heavy p-doping leads to another single line component with an isomer shift of −0.13 (5) mm/s and an effective Debye temperature of 232 (3) K. These components are ascribed to the neutral and doubly positive charge state of substitutional Te atoms, respectively.
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References
D.W. Hafemeister and H. de Waard, Phys. Rev. B 7 (1973) 3014.
G. Weyer, S. Damgaard and J.W. Petersen, Nuclear physics methods in materials research, ed. K. Bethge, H. Baumann, H. Jex and F. Rauch (Vieweg, 1980) p. 445 and references therein.
G. Weyer, J.W. Petersen and S. Damgaard, Hyp. Int. 10 (1981) 775 and references therein.
J. de Bruyn, R. Coussement, I. Deszi, G. Langouche and M. van Rossum, Hyp. Int. 10 (1981) 973.
I. Deszi, R. Coussement, G. Langouche, B. Molnar, D.L. Nagy and M. de Potter, J. de Phys. 41 (1980) C1–425.
G. Langouche, I. Deszi, M. van Rossum, J. de Bruyn and R. Coussement, Phys. Stat. Sol. (b) 93 (1979) K107.
M. van Rossum, J. de Bruyn, G. Langouche, M. de Potter and R. Coussement, Phys. Lett. 73A (1979) 127.
B.D. Sawicka and J.A. Sawicki, Phys. Lett. 64A (1977) 311.
H. de Waard, S. Bukshpan and G.J. Kemerink, Hyp. Int. 5 (1977) 45.
G.J. Kemerink, D.O. Boerma, H. de Waard and L. Niesen, Radiation Effects 69 (1983) 83.
G.J. Kemerink, H. de Waard, L. Niesen and D.O. Boerma, Radiation Effects 69 (1983) 101.
G.J. Kemerink, H. de Waard, L. Niesen and D.O. Boerma, to appear in Radiation Effects.
G.J. Kemerink, J.C. de Wit, H. de Waard, D.O. Boorma and L. Niesen, Phys. Lett. 82A (1981) 255.
J.F. Gibbons, W.S. Johnson and S.W. Mylroie, in Projected range statistics (Hutchinson and Ross, Stroudsburg, 1975).
S. Bukshpan, Solid State Commun. 6 (1968) 477.
Table of Isotopes, ed. C.M. Lederer and V.S. Shirley, (Wiley, New York, 1978).
Y. Tamminga, G.E.J. Eggermont, W.K. Hofker, D. Hoonhout, R. Garrett and F.W. Saris, Phys. Lett. 69A (1979) 436;
D. Hoonhout, Ph.D. thesis, University of Amsterdam (1980).
G. Weyer, A. Nylandsted-Larsen, N.E. Holm and H.L. Nielsen, Phys. Rev. B. 21 (1980) 4939.
A. Nylandsted-Larsen, G. Weyer and L. Nanver, Phys. Rev. B 21 (1980) 4951.
I.V. Nystiryuk and P.P. Seregin, Sov. Phys. Solid State 17 (1975) 768.
I.V. Nystiryuk and P.P. Seregin, Sov. Phys. Solid State 18 (1976) 673.
P.P. Seregin, I.V. Nystiryuk and F.S. Nasredinov, Sov. Phys. Solid State 17 (1975) 1540.
K. Matsui, R.R. Hasiguti, T. Shoji and A. Ohkawa, Proc. Int. Conf. on defects in semiconductors, ed. F.A. Huntley (Institute of Physics, Bristol, 1975) p. 572.
A. Baldreschi and J.J. Hopfield, Phys. Rev. Lett. 28 (1972) 171.
H.P. Hjalmarson, P. Vogl, D.J. Wolford and J.D. Dow, Phys. Rev. Lett. 44 (1980) 810.
R.L. Kaufman, K.A. Jamison, T.J. Gray and P. Richard, Phys. Rev. Lett. 36 (1976) 1074.
J. de Bruyn, Ph.D. thesis, University of Leuven (1980).
A.H. Muir, Tables and graphs for computing Debye-Waller factors in Mössbauer effect studies (Atomic International, 1962).
T.H. Ning and C.T. Sah, Phys. Rev. B 4 (1971) 3482.
S.T. Pantelides and C.T. Sah, Phys. Rev. B 10 (1974) 638.
H.G. Grimmeiss and B. Skarstam, Phys. Rev. B 23 (1981) 1947.
H.G. Grimmeiss, E. Jansen, H. Ennen, O. Schirmer, J. Schneider, R. Wörner, C. Holm, E. Sirtl and P. Wagner, Phys. Rev. B 24 (1981) 4571.
A.L. Lin, A.G. Crouse, J. Wendt, A.G. Campbell and R. Newman, Appl. Phys. Lett. 38 (1981) 683.
B.D. Dunlap and G.M. Kalvius, in Mössbauer isomer shifts, ed. G.K. Shenoy and F.E. Wagner (North-Holland, Amsterdam, 1978) p. 15.
B. Martin and R. Schulé, Phys. Lett. B 46 (1973) 367.
Ellis, quoted by S.L. Ruby and G.K. Shonoy,l. c. [33], p. 617.
G.J. Kemerink, Ph.D. thesis, University of Groningen (1981).
D.K. Wilson, Phys. Rev. A 134 (1964) 265.
R.K. Sundfors and D.F. Holcomb, Phys. Rev. A 136 (1964) 810.
F.A. Huntley, H. Mehrer and A. Seeger,l. c. [22], p. 557.
C. Kittel, in Introduction to solid state physics (J. Wiley, New York, 1971) p. 129.
A.A. Opalenko and Z. Zallam, Phys. Stat. Sol. (b) 99 (1980) K27.
U. Ladewig, B. Perscheid and G. Kaindl, Hyp. Int. 10 (1981) 957.
C. Yamamouchi, K. Mizuguchi and W. Sasaki, J. Phys. Soc. Japan 22 (1967) 859.
K. Morigaki and S. Mackawa, J. Phys. Soc. Japan 32 (1972) 462.
B.G. Zhurkin and N.A. Penin, Sov. Phys. Solid State 6 (1964) 879.
H.G. Grimmeiss, E. Janzén and B. Skarstam, J. Appl. Phys. 51 (1980) 3740.
E. Kankeleit and A. Körding, J. de Phys. 37 (1976) C6–5.
J.W. Petersen, O.H. Nielsen, G. Weyer, E. Antoncik and S. Damgaard, Phys. Rev. B 21 (1980) 4292.
cf. c. g. W.J. Moore, Physical Chemistry (Longmans, 1962) p. 530.
P.P. Seregin, F.S. Nasredinov and A.Sl. Bakhtiyarov, Phys. Stat. Sol. (b) 91, (1979) 35.
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Based on the Ph.D. thesis of G.J. Kemerink, University of Groningen (1981).
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Kemerink, G.J., de Waard, H., Niesen, L. et al. Mössbauer spectroscopy of laser annealed tellurium implanted silicon (I).119Sn and125Te. Hyperfine Interact 14, 37–51 (1983). https://doi.org/10.1007/BF02098294
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DOI: https://doi.org/10.1007/BF02098294