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Mössbauer spectroscopy of laser annealed tellurium implanted silicon (I).119Sn and125Te

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Abstract

Laser annealed Te-implanted silicon has been investigated using119Sn and125Te Mössbauer spectroscopy. The119Sn Mössbauer spectra consist of a single lorentzian, known to be due to substitutional Sn atoms in Si, independent of the type of doping of the silicon. The results on125Te revcal at least two different components. In heavily doped n-type Si a single line component is observed with an isomer shift of 0.15 (5) mm/s with respect to SnTe and an effective Debye temperature of 207 (3) K. Heavy p-doping leads to another single line component with an isomer shift of −0.13 (5) mm/s and an effective Debye temperature of 232 (3) K. These components are ascribed to the neutral and doubly positive charge state of substitutional Te atoms, respectively.

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Based on the Ph.D. thesis of G.J. Kemerink, University of Groningen (1981).

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Kemerink, G.J., de Waard, H., Niesen, L. et al. Mössbauer spectroscopy of laser annealed tellurium implanted silicon (I).119Sn and125Te. Hyperfine Interact 14, 37–51 (1983). https://doi.org/10.1007/BF02098294

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