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Influence of the cap layer thickness on photoluminescence properties in strained InGaAs/GaAs single quantum wells

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Abstract

The influence of the GaAs cap layer thickness on the luminescence properties in strained In0.20Ga0.80As/GaAs single quantum well (SQW) structures has been investigated using temperature-dependent photoluminescence (PL) spectroscopy. The luminescence peak is shifted to lower energy as the GaAs cap layer thickness decreases, which demonstrates the effect of the GaAs cap layer thickness on the strain of InGaAs/GaAs single quantum wells (SQW). We find the PL quenching mechanism is the thermal activation of electron hole pairs from the wells into the GaAs cap layer for the samples with thicker GaAs cap layer, while in sample with thinner GaAs cap layer exciton trapping on misfit dislocations is dominated.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, 200083, Shanghai, People's Republic of China

    W. Z. Shen, W. G. Tang & S. C. Shen

  2. Department of Physics, Chalmers University of Technology, S-41296, Göteborg, Sweden

    T. Anderson

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  1. W. Z. Shen
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  2. W. G. Tang
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  3. S. C. Shen
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  4. S. M. Wang
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  5. T. Anderson
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Shen, W.Z., Tang, W.G., Shen, S.C. et al. Influence of the cap layer thickness on photoluminescence properties in strained InGaAs/GaAs single quantum wells. Int J Infrared Milli Waves 15, 1643–1650 (1994). https://doi.org/10.1007/BF02096891

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  • DOI: https://doi.org/10.1007/BF02096891

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