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Silicon doped with gallium photoconductors: Effect of uniaxial stress and detector development

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Conclusion

The evolution of the spectral response of Si:Ga photoconductors with uniaxial stress is studied. The cut-off wavenumber is lowered by 14% at a stress of 0.6 GPa, in a spectral range where strong absorption by the lattice occurs. Unstressed Si:Ga detectors have been developed for the AROME instrument focal plane. This experiment was devoted to measure the diffuse near infrared emission of our Galaxy in order to estimate the power radiated in particular spectral bands characteristic to Polycyclic Aromatic Hydrocarbons. The recent transmediterranean balloon flight gave extensive data which are now being processed.

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Authors and Affiliations

  1. Laboratoire de Physique des Solides, UPS/INSA, 31077, Toulouse Cédex, France

    C. Mény, G. Sirmain & J. Lotin

  2. Centre d'Etude Spatiale des Rayonnements, BP 4346, 31029, Toulouse Cédex, France

    I. Ristorrcelli, C. Le Naour & M. Giard

  3. Laboratoire d'InfraRouge, CEA-CENG 85X, 31068, Toulouse Cédex, France

    C. Lucas

  4. National Physical Laboratory, Teddington, Middlesex, United Kingdom

    J. R. Birch

Authors
  1. C. Mény
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  2. I. Ristorrcelli
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  3. C. Le Naour
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  4. M. Giard
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  5. C. Lucas
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  6. G. Sirmain
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  7. J. R. Birch
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  8. J. Lotin
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Mény, C., Ristorrcelli, I., Le Naour, C. et al. Silicon doped with gallium photoconductors: Effect of uniaxial stress and detector development. Int J Infrared Milli Waves 15, 819–828 (1994). https://doi.org/10.1007/BF02096578

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  • DOI: https://doi.org/10.1007/BF02096578

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