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Microwave hall field inertia due to dielectric relaxation time

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Abstract

The magnetoresistive e.m.f. caused by microwave was measured as a function ofωτ m in wide (3 cm – 4mm) range wave length. It has been found that Maxwell relaxation time does not influence the microwave Hall field lag in semiconductors. The discussion of these results is presented.

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References

  1. Barlow H.E.M. Hall-effect reinforcement of high-frequency fields in semiconductors. Proc IEE. 1964, V.111, No.2, p.231–234

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  2. V. Tauras, R. Vaškevičius, K. Repšas, The magnetoresistance e.m.f. in n-type germanium and silicon in high mw fields. Liet.fiz.rink. (Litovskij fizicheskij sbornik), XXVI, Nr.5, 1986, p.596–601

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Authors and Affiliations

  1. Semiconductor Physics Institute, Goštauto 11, 2600, Vilnius, Lithuania

    A. -R. Vaškevičius, V. Orševskis, K. Repšas & V. Tauras

Authors
  1. A. -R. Vaškevičius
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  2. V. Orševskis
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  3. K. Repšas
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  4. V. Tauras
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Vaškevičius, A.R., Orševskis, V., Repšas, K. et al. Microwave hall field inertia due to dielectric relaxation time. Int J Infrared Milli Waves 15, 585–591 (1994). https://doi.org/10.1007/BF02096241

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  • DOI: https://doi.org/10.1007/BF02096241

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