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Modification of Drude model on the free carrier property of IV-VI compound semiconductor in magnetic field

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International Journal of Infrared and Millimeter Waves Aims and scope Submit manuscript

Abstract

A general analytical expression is reported for the Drude model's dielectric function of free carrier in multi-valley IV-VI compound semiconductor in the magnetic field. The modifications of the energy band non-parabolicity and free carrier re-population are introduced to the dielectric function in combination with the\(\vec k \cdot \vec P\) model. The difference of the dielectric function between the modified Drude model and the classical Drude model is demonstrated by the calculation for the typical IV-VI compound semiconductor material PbTe.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Academia Sinica, Shanghai Institute of Technical Physics, Academia Sinica, 420 Zhong Shan Bei Yi Road, 200083, Shanghai, China

    W. Lu, P. L. Liu & S. C. Shen

  2. Department of Physics (optical) Fudan University, Fudan-T.D. Lee Physics Laboratory, 200433, Shanghai, China

    W. Lu

  3. Humboldt University of Berlin, Invalidenstrasse 110, D-1040, Berlin, F. R. Germany

    M. von Ortenberg

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  1. W. Lu
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  2. P. L. Liu
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  3. S. C. Shen
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  4. M. von Ortenberg
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Hai Da Fellow

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Lu, W., Liu, P.L., Shen, S.C. et al. Modification of Drude model on the free carrier property of IV-VI compound semiconductor in magnetic field. Int J Infrared Milli Waves 15, 991–999 (1994). https://doi.org/10.1007/BF02096130

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  • DOI: https://doi.org/10.1007/BF02096130

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