Abstract
The optimum intensity of laser radiation and the lowest attainable temperature of the sample to be cooled are estimated on the basis of a model that takes into account radiative and nonradiative recombination of charge carriers, absorption of radiation due to band-to-band transitions and by free charge carriers, reabsorption of spontaneously emitted photons in the bulk of the sample, and saturation of the absorption coefficient.
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Translated from a manuscript submitted April 25, 1996.
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Oraevsky, A.N. Cooling of semiconductors by laser radiation. J Russ Laser Res 17, 471–479 (1996). https://doi.org/10.1007/BF02090626
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DOI: https://doi.org/10.1007/BF02090626