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Nonlinear pulse response of p-i-n photodiode caused by the change of the bias voltage

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Abstract

An analytical expression is derived for nonlinear response of a p-i-n photodiode, commonly used in optical communications. Nonlinearity is caused only by the change of bias voltage, in case of pulse light excitation. The response time increases slowly with increasing the incident pulse power as a result of this nonlinearity. It is assumed in calculations that the optical excitation is not so strong to cause space charge redistribution.

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Matavulj, P.S., Gvozdić, D.M., Radunović, J.B. et al. Nonlinear pulse response of p-i-n photodiode caused by the change of the bias voltage. Int J Infrared Milli Waves 17, 1519–1528 (1996). https://doi.org/10.1007/BF02088505

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  • DOI: https://doi.org/10.1007/BF02088505

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