35 GHz dielectric resonator stabilised gunn oscillator
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A 35 GHz dielectric resonator oscillator(DRO) using GaAs Gunn diode in microstrip configuration has been designed and developed. The oscillator, with an integral waveguide-to-microstrip transition, delivered an output greater than 18 dBm. Phase noise of the oscillator is found to be better than −80 dBc/Hz at 100 KHz away from the carrier. A frequency drift of about ±25 MHz has been observed over the temperature range from −10 °C to 50 °C.
KeywordsGaAs Phase Noise Dielectric Resonator Frequency Drift Resonator Oscillator
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