Abstract
A GaAs second harmonic Gunn oscillator for D-band applications is proposed. The doping structure of the active device has been optimized using Monte-Carlo and hydrodynamic models. The load impedance characteristic of a resonant mounting structure in a WR06 waveguide has been consistently taken into account. At sufficiently low load resistances and reactances, output powers of the order of 20–50 mW should be obtainable around 140 GHz under realistic thermal conditions.
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Curow, M., Abou-Elnour, A. & Schünemann, K. D-band operation of a second harmonic GaAs gunn oscillator. Int J Infrared Milli Waves 17, 305–316 (1996). https://doi.org/10.1007/BF02088153
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DOI: https://doi.org/10.1007/BF02088153