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Far-infrared pump-probe measurement of the lifetime of the 2p−1 shallow donor level in n-GaAs

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Abstract

The low temperature lifetime of electrons excited in the 2p−1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1so−2p−1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations.

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Authors and Affiliations

  1. Department of Applied Physics, Delft University of Technology, P. O. Box 5046, 2600 GA, Delft, The Netherlands

    A. J. Kalkman, H. P. M. Pellemans, T. O. Klaassen & W. Th. Wenckebach

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  1. A. J. Kalkman
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  2. H. P. M. Pellemans
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  3. T. O. Klaassen
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  4. W. Th. Wenckebach
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Kalkman, A.J., Pellemans, H.P.M., Klaassen, T.O. et al. Far-infrared pump-probe measurement of the lifetime of the 2p−1 shallow donor level in n-GaAs. Int J Infrared Milli Waves 17, 569–577 (1996). https://doi.org/10.1007/BF02088030

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  • DOI: https://doi.org/10.1007/BF02088030

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