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High precision analysis of finlines on semiconductor substrate

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Abstract

In this study, the effect of the metallization thickness in finlines on semiconcuctor substrate is researched. The propagation parameters are computed to measure the inluence of the metallization. The theory and numerical results are presented to the propagation constant and characteristic impedance of the bilateral and unilateral finlines. The full wave analysis of the transverse transmission line — TTL method is used to determine the electromagnetic fields of the structure in Fourier transform domain — FTD. Applying the suitable boundary conditions, the moment method and expanding the fields in a set of suitable bases functions, a homogeneous matrix system is obtained and the propagation constant is computed. The characteristic impedance is obtained using the relation of the voltage in the slot and the transmitted power by the structure.

Computational programs are developed to obtain numerical results to the propagation parameters composed by the propagation constant and characteristic impedance.

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Authors and Affiliations

  1. Department of Electrical Engineering Technological Center, Federal University of Rio Grande do Norte, 5972-970, Natal, RN, Brazil

    Humberto César Chaves Fernandes, Eduardo Armorim Martins de Souza & Idalmir de Souza Queiroz Jr

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  1. Humberto César Chaves Fernandes
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  2. Eduardo Armorim Martins de Souza
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  3. Idalmir de Souza Queiroz Jr
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This work received financial support by CAPES and CNPq.

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Fernandes, H.C.C., de Souza, E.A.M. & Queiroz, I.d.S. High precision analysis of finlines on semiconductor substrate. Int J Infrared Milli Waves 16, 185–200 (1995). https://doi.org/10.1007/BF02085855

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