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Formation and decomposition of thin rhodium oxide films

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Abstract

Interaction of O2 with Rh (poly) and Rh (100) has been studied by Auger Electron Spectroscopy and thermal desorption method at O2 pressures of 10−5–103 Pa and at 400–1600 K. At P(O2)<10−5 Pa chemisorption of O2 occurs, at P(O2)=10−5–10−1 Pa surface oxides are formed, at P(O2)>1.0 Pa a bulk Rh2O3 oxide starts to grow. The growth of rhodium oxide film proceeds via the Cabrera-Mott mechanism. Its decomposition occurs via a mechanism including electron transfer across the oxide film, O2 desorption from the surface layer and rearrangement of the oxide layer.

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Salanov, A.N., Savchenko, V.I. Formation and decomposition of thin rhodium oxide films. React Kinet Catal Lett 49, 29–37 (1993). https://doi.org/10.1007/BF02084025

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  • DOI: https://doi.org/10.1007/BF02084025

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