Abstract
The formation of Sb-H complexes in n-type Si after the induction of H by low-energy implantation has been investigated using119Sb →119Sn source Mössbauer spectroscopy. We have studied the different Mössbauer fractions as a function of H- and Sb-dose and as a function of H-implantation temperature. We can explain our results by assuming thermal equilibrium between Sb-H complexes and clustered H *2 pairs, attributing the visible hydrogen associated fraction to SbH and the “invisible fraction to SbH2 complexes. The results show that the binding energy of hydrogen in these three forms differ only by about 0.1 eV, being the highest for H *2 and the lowest for SbH.
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References
J.W. Corbett, S.J. Pearton and M. Stavola, in:Defects Control in Semiconductors, ed. K. Sumino (North-Holland, Amsterdam, 1990) p. 53.
C. Herring and N.M. Johnson, in:Hydrogen in Semiconductors, vol. eds. J.I. Pankove and N.M. Johnson, Semiconductors and Semimetals Vol. 34 (Academic, New York, 1991) chap. 10.
C.H. Seager, R.A. Anderson and D.K. Brice, J. Appl. Phys. 68(1990)3268.
N.M. Johnson and C. Herring, Phys. Rev. 43(1991)14297.
K.J. Chang and D.J. Chadi, Phys. Rev. Lett. 62(1989)937.
L. Korpas, J.W. Corbett and S.K. Estreicher, Phys. Rev. B46(1992)12365.
Z.N. Liang and L. Niesen, Hyp. Int. 60(1990)749.
Z.N. Liang and L. Niesen, Mater. Sci. Forum 83–87(1992)99.
Z.N. Liang and L. Niesen, Nucl. Instr. Meth. B63(1992)147.
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Liang, Z.N., Niesen, L. & Haas, C. Evidence for Sb associated with multi-hydrogen in n-type silicon. Hyperfine Interact 93, 1389–1394 (1994). https://doi.org/10.1007/BF02072882
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DOI: https://doi.org/10.1007/BF02072882