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Quantum diffusion of muonium in GaAs with shallow donor impurities

  • Session 1. Diffusion/Localization
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Abstract

Muonium diffusion was studied in silicon doped GaAs by means of muon spin relaxation in a longitudinal field. The muonium hopping frequencies in two samples with n-type carrier concentration of 1012∼14 cm−3 and 8×1016 cm−3 were deduced by using the model of fluctuating effective local fields. We found that muonium diffusion is strongly influenced by the dilute Si impurity in both samples in the temperature range belowT Δ≃30K. The absence of such a behavior in compensated high-resistivity samples indicates that the presence of shallow donor levels plays a decisive role for the tunneling diffusion of muonium in semiconductors.

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Author information

Author notes

  1. A. Matsushita

    Present address: Research Development Corporation of Japan, Japan

Authors and Affiliations

  1. Institute of Physical and Chemical Research, RIKEN, Wako, 351-01, Saitama, Japan

    R. Kadono, A. Matsushita & K. Nagamine

  2. Opto-Electronics R&D Laboratories, Sumitomo Electric Industries Ltd., Yokohama, 244, Kanagawa, Japan

    S. Fujii

  3. Meson Science Laboratory, Faculty of Science, University of Tokyo, Hongo, Bunkyo-ku, 113, Tokyo, Japan

    K. Nagamine & K. Nishiyama

  4. Institute of Material Science, University of Tsukuba, Tsukuba, 305, Ibaraki, Japan

    S. Tanigawa

Authors
  1. R. Kadono
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  2. S. Fujii
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  3. A. Matsushita
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  4. K. Nagamine
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  5. K. Nishiyama
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  6. S. Tanigawa
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Additional information

We would like to thank Drs. N.V. Prokof'ev and R.F. Kiefl for helpful discussion.

After submission of this paper it was revealed by the field dependence of the LF relaxation rate that the observed relaxation rate in GaAs:Si-B is due to spin-exchange interaction of Mu*.

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Kadono, R., Fujii, S., Matsushita, A. et al. Quantum diffusion of muonium in GaAs with shallow donor impurities. Hyperfine Interact 85, 79–84 (1994). https://doi.org/10.1007/BF02069405

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