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Transverse dislocation analog of the Nernst-Ettingshausen effect in ionic crystals

  • Physics Of Semiconductors And Dielectrics
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Russian Physics Journal Aims and scope

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Abstract

We show that in ionic crystals under the action of a temperature gradient and an external magnetic field on the cloud of point defects surrounding a charged dislocation, a phenomenon arises which is analogous to the Nernst-Ettingshausen effect.

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Authors and Affiliations

  1. Saratov State Technical University, USSR

    S. G. Gestrin, A. N. Sal'nikov & E. V. Struleva

Authors
  1. S. G. Gestrin
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  2. A. N. Sal'nikov
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  3. E. V. Struleva
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 80–83, January, 1996.

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Gestrin, S.G., Sal'nikov, A.N. & Struleva, E.V. Transverse dislocation analog of the Nernst-Ettingshausen effect in ionic crystals. Russ Phys J 39, 73–76 (1996). https://doi.org/10.1007/BF02069245

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  • DOI: https://doi.org/10.1007/BF02069245

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