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Features in the kinetics of lateral zone crystallization of semiconductor crystals in a temperature gradient field

  • Physics Of Semiconductors And Dielectrics
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Russian Physics Journal Aims and scope

Abstract

Theoretical and experimental investigations of the kinetics of a lateral zone crystallization process in a temperature gradient field are given. Kinetic rules for the method are established which allow one to control the rate of the process and the configuration of the crystallization channel.

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Authors and Affiliations

  1. Novocherkassk State Technical University, USSR

    S. Yu. Knyazev, A. V. Balyuk & L. M. Seredin

Authors
  1. S. Yu. Knyazev
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  2. A. V. Balyuk
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  3. L. M. Seredin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 67–71, January, 1996.

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Knyazev, S.Y., Balyuk, A.V. & Seredin, L.M. Features in the kinetics of lateral zone crystallization of semiconductor crystals in a temperature gradient field. Russ Phys J 39, 62–65 (1996). https://doi.org/10.1007/BF02069242

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  • DOI: https://doi.org/10.1007/BF02069242

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