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Hyperfine Interactions

, Volume 86, Issue 1, pp 667–672 | Cite as

Passivation of an Al acceptor in silicon by hydrogen or muonium

  • S. Vogel
  • N. Paschedag
  • P. F. Meier
Session 5. Semiconductors and Insulators

Abstract

We report on calculations of the electric field gradient at the site of the Al nucleus in the Si-H-Al complex in silicon. As a model for the surroundings of the complex we used a cluster consisting of 43 silicon and one aluminum atoms. The geometry of this cluster was fully optimized at the Hartree-Fock level. To discuss the dependence of our results on the level of theory, we studied a subcluster of four silicon and one aluminum atoms at the Hartree-Fock and CASSCF level.

Keywords

Hydrogen Aluminum Silicon Thin Film Field Gradient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© J.C. Baltzer AG, Science Publishers 1994

Authors and Affiliations

  • S. Vogel
    • 1
  • N. Paschedag
    • 1
  • P. F. Meier
    • 1
  1. 1.Physik-Institut der Universität Zürich-IrchelZürichSwitzerland

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