Hyperfine Interactions

, Volume 86, Issue 1, pp 667–672 | Cite as

Passivation of an Al acceptor in silicon by hydrogen or muonium

  • S. Vogel
  • N. Paschedag
  • P. F. Meier
Session 5. Semiconductors and Insulators


We report on calculations of the electric field gradient at the site of the Al nucleus in the Si-H-Al complex in silicon. As a model for the surroundings of the complex we used a cluster consisting of 43 silicon and one aluminum atoms. The geometry of this cluster was fully optimized at the Hartree-Fock level. To discuss the dependence of our results on the level of theory, we studied a subcluster of four silicon and one aluminum atoms at the Hartree-Fock and CASSCF level.


Hydrogen Aluminum Silicon Thin Film Field Gradient 


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Copyright information

© J.C. Baltzer AG, Science Publishers 1994

Authors and Affiliations

  • S. Vogel
    • 1
  • N. Paschedag
    • 1
  • P. F. Meier
    • 1
  1. 1.Physik-Institut der Universität Zürich-IrchelZürichSwitzerland

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