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Hyperfine Interactions

, Volume 86, Issue 1, pp 645–651 | Cite as

μSR studies in heavily doped GaAs

  • K. H. Chow
  • R. F. Kiefl
  • J. W. Schneider
  • T. L. Estle
  • B. Hitti
  • T. M. S. Johnston
  • R. L. Lichti
  • W. A. MacFarlane
Session 5. Semiconductors and Insulators

Abstract

Transverse-field (TF) and longitudinal-field (LF)μ+SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results.

Keywords

Thin Film GaAs Charge Carrier Exchange Interaction Relaxation Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© J.C. Baltzer AG, Science Publishers 1994

Authors and Affiliations

  • K. H. Chow
    • 1
  • R. F. Kiefl
    • 1
  • J. W. Schneider
    • 1
  • T. L. Estle
    • 2
  • B. Hitti
    • 2
  • T. M. S. Johnston
    • 1
  • R. L. Lichti
    • 3
  • W. A. MacFarlane
    • 1
  1. 1.TRIUMF and University of British ColumbiaVancouverCanada
  2. 2.Physics DepartmentRice UniversityHoustonUSA
  3. 3.Physics DepartmentTexas Tech UniversityLubbockUSA

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