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Ein Gerät zur graphischen Bestimmung der Fermi-Grenzenergie in Halbleitern

  • Emanuel Mooser
Article

Summary

A computor is described which allows the Fermi-energy in a semiconductor to be calculated as a function of temperature and of the quantities characterizing the bandstructure. At the same time as determining the Fermi-energy the computor gives the temperature dependence of the concentration of charge carriers in any semiconductor, whatever the degree of degeneracy of the charge carriers in the valence- and conduction band and in impurity levels.

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Literaturverzeichnis

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    P. T. Landsberg, R. W. Mackay undA. D. McRonald, Proc. Phys. Soc.64, 476 (1951).Google Scholar
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    W. Shockley,Electrons and Holes in Semiconductors (Van Nostrand Co., New York 1950).Google Scholar
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    J. McDougall undE. C. Stoner, Phil. Trans. Roy. Soc. [A]237, 67 (1939).Google Scholar

Copyright information

© Verlag Birkhäuser AG 1953

Authors and Affiliations

  • Emanuel Mooser
    • 1
  1. 1.Physikalisches Institut der ETHZürich

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